nov-02-2004 1 bar90... silicon deep trench pin diodes ? optimized for low bias current antenna switches in hand held applications ? very low capacitance at zero volt reverse bias at frequencies above 1ghz (typ. 0.19pf) ? low forward resistance (typ. 1.3 ? @ i f = 3ma) ? improved on / off mode harmonic distortion balance bar90-02l bar90-02lrh BAR90-07L4 bar90-07lrh bar90-099l4 bar90-099lrh bar90-098l4 bar90-098lrh type package configuration l s (nh) marking bar90-02l* bar90-02lrh* BAR90-07L4* bar90-07lrh* bar90-098l4* bar90-098lrh* bar90-099l4* bar90-099lrh* tslp-2-1 tslp-2-7 tslp-4-4 tslp-4-7 tslp-4-4 tslp-4-7 tslp-4-4 tslp-4-7 single, leadless single, leadless parallel pair, leadless parallel pair, leadless anti-parallel pair, leadless anti-parallel pair, leadless anti-parallel pair, leadless anti-parallel pair, leadless 0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.4 rt r9 rt t tt t9 tr 99 * preliminary data maximum ratings at t a = 25c, unless otherwise specified parameter symbol value unit diode reverse voltage v r 80 v forward current i f 100 ma total power dissipation t s 133c p tot 250 mw junction temperature t j 150 c operating temperature range t op -55 ... 125 storage temperature t stg -55 ... 150
nov-02-2004 2 bar90... thermal resistance parameter symbol value unit junction - soldering point 1) r thjs 65 k/w electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics breakdown voltage i (br) = 5 a v (br) 80 - - v reverse current v r = 60 v i r - - 50 na forward voltage i f = 3 ma i f = 100 ma v f 0.75 - 0.81 0.9 0.87 1 v 1 for calculation of r thja please refer to application note thermal resistance
nov-02-2004 3 bar90... electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics diode capacitance v r = 1 v, f = 1 mhz v r = 0 v, f = 100 mhz v r = 0 v, f = 1 ghz v r = 0 v, f = 1.8 ghz c t - - - - 0.25 0.3 0.19 0.18 0.35 - - - pf reverse parallel resistance v r = 0 v, f = 100 mhz v r = 0 v, f = 1 ghz v r = 0 v, f = 1.8 ghz r p - - - 35 5 4 - - - k ? forward resistance i f = 1 ma, f = 100 mhz i f = 3 ma, f = 100 mhz i f = 10 ma, f = 100 mhz r f - - - 2 1.3 0.8 - 2.3 - ? charge carrier life time i f = 10 ma, i r = 6 ma, measured at i r = 3 ma, r l = 100 ? rr - 750 - ns i-region width w i - 20 - m insertion loss 1) i f = 1 ma, f = 1.8 ghz i f = 3 ma, f = 1.8 ghz i f = 10 ma, f = 1.8 ghz | s 21 | 2 - - - -0.16 -0.11 -0.08 - - - db isolation 1) v r = 0 v, f = 0.9 ghz v r = 0 v, f = 1.8 ghz v r = 0 v, f = 2.45 ghz | s 21 | 2 - - - -18.5 -13.5 -11.5 - - - 1 bar90-02l in series configuration, z = 50 ?
nov-02-2004 4 bar90... diode capacitance c t = ? (v r ) f = parameter 0 2 4 6 8 10 12 14 16 v 20 v r 0.1 0.15 0.2 0.25 0.3 0.35 0.4 pf 0.5 c t 1 mhz 100 mhz 1 ghz 1.8 ghz reverse parallel resistance r p = ? ( v r ) f = parameter 0 2 4 6 8 10 12 14 16 v 20 v r -1 10 0 10 1 10 2 10 3 10 4 10 kohm r p 100 mhz 1 ghz 1.8 ghz forward resistance r f = ? ( i f ) f = 100 mhz 10 -1 10 0 10 1 10 2 ma i f -1 10 0 10 1 10 ohm r f forward current i f = ? ( v f ) t a = parameter 0.2 0.4 0.6 0.8 v 1.2 v f -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 a i f -40c +25 c +85 c +125 c
nov-02-2004 5 bar90... forward current i f = ? ( t s ) 0 15 30 45 60 75 90 105 120 c 150 t s 0 10 20 30 40 50 60 70 80 90 100 ma 120 i f permissible puls load r thjs = ? ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 c t p -1 10 0 10 1 10 2 10 ma r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load i fmax / i fdc = ? ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 c t p 0 10 1 10 2 10 ma i fmax / i fdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 insertion loss |s 21 | 2 = ? ( f ) i f = parameter bar90-02l in series configuration, z = 50 ? 0 1 2 3 4 ghz 6 f -0.4 -0.35 -0.3 -0.25 -0.2 -0.15 -0.1 db 0 insertion loss 10ma 3ma 1ma 0.5ma
nov-02-2004 6 bar90... isolation | s 21 | 2 = ? (f) v r = parameter bar90-02l in series configuration, z = 50 ? 0 1 2 3 4 ghz 6 f -30 -25 -20 -15 -10 db 0 isolation 0 v 1 v 10 v
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